Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
| Autor: | A. Minko, Sylvain Delage, J.C. De Jaeger, Philippe Bove, Christophe Gaquiere, Hacene Lahreche, Virginie Hoel, Damien Ducatteau, B. Grimbert, Erwan Morvan, E. Delos |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Power gain
Materials science business.industry Transistor Wide-bandgap semiconductor High-electron-mobility transistor Substrate (electronics) Cutoff frequency Electronic Optical and Magnetic Materials law.invention law Optoelectronics Electrical and Electronic Engineering business Current density Power density |
| Zdroj: | IEEE Electron Device Letters. 27:7-9 |
| ISSN: | 0741-3106 |
| Popis: | Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F/sub T/) of 50 GHz are achieved for a 0.25 /spl mu/m gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2/spl times/50/spl times/0.25 /spl mu/m/sup 2/ HEMT with a power gain of 9.1dB. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|