DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes
| Autor: | Emmanuel Collard, Sodjan Koné, Arnaud Yvon, Frédéric Cayrel, Daniel Alquier |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Resistive touchscreen Materials science Deep-level transient spectroscopy business.industry Schottky barrier Schottky diode 02 engineering and technology Surfaces and Interfaces Edge (geometry) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion Ion implantation 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Diode |
| Zdroj: | physica status solidi (a). 213:2364-2370 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201532895 |
| Popis: | Efficient edge terminations are fundamental for power electronic devices. High resistive edge termination technique obtained by ion implantation is a possible solution for GaN Schottky barrier diodes (SBD), but may induce defects detrimental to the devices. In this work, two sets of GaN SBDs, with or without a high resistive guard ring edge termination, were investigated by deep levels transient spectroscopy (DLTS). The corresponding DLTS spectra of devices with guard ring were compared to those of as-fabricated devices (without). Four deep traps at 0.13, 0.26, 0.35, and 0.51 eV were observed below the conduction band in as-fabricated structures while the ones with guard ring exhibit two additional levels at 0.47 and 0.80 eV and a strong enhancement in DLTS peaks magnitude. Further investigations showed that the additional traps detected in SBD devices with guard ring were consistent with ion implantation-induced damages. These observations highlight the impact of high resistive edge termination technique on our devices and raise the need of optimization of such crucial structure for the improvement of GaN-based Schottky barrier diode. |
| Databáze: | OpenAIRE |
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