High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique
| Autor: | H. Matsubara, A. Takami, Wataru Susaki, Akihiro Shima, T. Kamizato, Shoichi Karakida, K. Isshiki |
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| Rok vydání: | 1990 |
| Předmět: |
Materials science
business.industry Condensed Matter Physics Laser Waveguide (optics) Atomic and Molecular Physics and Optics law.invention Semiconductor laser theory Transverse mode Surface coating law Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Power density Diode |
| Zdroj: | IEEE Journal of Quantum Electronics. 26:837-842 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.55524 |
| Popis: | High-power and low-threshold-current GaAlAs lasers with a simple window structure fabricated by controllable open-tube two-step diffusion and single-step metalorganic chemical vapor deposition are discussed. The window structure and the waveguide with a narrow width around 2 mu m are formed by diffusion of zinc, which just passes through an n-type active layer. CW output power up to 134 mW without catastrophic damage and a threshold current of 17 mA have been achieved. A maximum output power density of 16 MW/cm/sup 2/ is estimated. A stable fundamental transverse mode of up to 100 mV in the wavelength range of 780 nm is obtained. Excellent uniformity of device characteristics is confirmed. > |
| Databáze: | OpenAIRE |
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