| Autor: |
Tatsuya Kimura, T. Shiba, Yutaka Mihashi, Masayoshi Takemi, Kimitaka Shibata, S. Takamiya, Masao Aiga |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 180:1-8 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/s0022-0248(97)00195-4 |
| Popis: |
Growth behavior of sulfur-doped n-InP around reactive ion-etched (RIE) mesas has been investigated for realization of p-substrate buried heterostructure laser utilizing metalorganic vapor phase epitaxy. It is found that the growth of n-InP layer on the sidewall of the mesa ((1 1 0) plane) is significantly suppressed, as the flow rate of hydrogen sulfide (H2S) which is used for n-type doping, increased. This phenomenon of growth suppression was also observed for growth of highly S-doped n-InP on narrow (0 0 1) facets. Taking account of both, these phenomena can be explained by migration enhancement of indium atoms on sulfur-terminated surfaces caused by excess H2S supply. Consequently, the shape of the regrown embedding layer was found to be exactly controlled by the H2S flow rate. Using this technique, a p-substrate 1.3 μm buried heterostructure laser with pnp current-blocking structure has been successfully fabricated around the RIE mesa and excellent lasing characteristics with high reliability has been realized for the first time. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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