Bridgman growth of Bi4Si3O12 scintillation crystals and doped effects on radiation resistance

Autor:	Sun Renying, Mitsuru Ishii, Fan Shi-ji, Fei Yiting, Xu Jiayue
Rok vydání:	2000
Předmět:	Scintillation Dopant Absorption spectroscopy business.industry Chemistry Doping Radioluminescence Condensed Matter Physics Crystal Optoelectronics General Materials Science Bridgman growth business Radiation resistance Nuclear chemistry
Zdroj:	Progress in Crystal Growth and Characterization of Materials. 40:189-194
ISSN:	0960-8974
DOI:	10.1016/s0960-8974(00)00004-8
Popis:	Ce, Nd and Eu doped BSO crystals 20×20× 100mm3 in size have been gown by vertical Bridgman method, and the doped effects on radiation resistance of BSO have also been studied for the first time. Nd and Eu dopns were found to improve the radiation resistance of BSO. However, Cc and Nd dopings degrade the light output of BSO except that Eu doping has almost no effect on it. Therefore, Eu may be the most promising dopant candidate for improving the scintillation properties of BSO crystal.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eb99b31f7040f230a95410ace082a3db https://doi.org/10.1016/s0960-8974(00)00004-8 Zobrazit plný text záznamu Full Text from ScienceDirect