Vacuum Annealing Effects on the Surface Stoichiometry of InGaAsP
| Autor: | B. Schwartz, M. J. Vasile, J. L. Yeh, S. Z. Liu |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Fabrication Renewable Energy Sustainability and the Environment Annealing (metallurgy) Inorganic chemistry Analytical chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor laser theory chemistry Lattice (order) Torr Materials Chemistry Electrochemistry Inorganic compound Stoichiometry |
| Zdroj: | Journal of The Electrochemical Society. 137:1319-1320 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2086659 |
| Popis: | The use of the binary and quaternary systems InP and In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}P{sub y} for the fabrication of long wavelengths (i.e., 1.3-1.6{mu}m) LED's and lasers is a well-established approach. Our work is focused on the quaternay (Q) materials, with the major emphasis being on the surface chemistry of epitaxially grown Q-layers, lattice matched to InP and photoluminescing at about 1.3 {mu}m. In this paper the authors report on a surface stoichiometry shift that has been observed on annealing Q-layers up to about 600{degrees}C in a vacuum ({approximately}10{sup {minus}9} Torr). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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