Parylene-C and High-kPolymer Bilayer Gate Dielectric for Low-Operating Voltage Organic Field-Effect Transistors

Autor:	Tetsuo Tsutsui, Takeshi Yasuda, Tomoyuki Ashimine, Tomoaki Onoue, Katsuhiko Fujita
Rok vydání:	2007
Předmět:	Organic field-effect transistor Materials science business.industry Gate dielectric Insulator (electricity) General Chemistry Dielectric Condensed Matter Physics Threshold voltage Organic semiconductor Optoelectronics General Materials Science Field-effect transistor business High-κ dielectric
Zdroj:	Molecular Crystals and Liquid Crystals. 471:221-227
ISSN:	1563-5287 1542-1406
Popis:	We propose a way to fabricate polymer insulators with a high gate capacitance for low-operating voltage organic field-effect transistors (OFETs). The insulator consists of spin-coated cyanoethylpullulan as a high-k polymer and chemical vapor deposited parylene-C as a covering layer. Parylene-C layer is insoluble in a common organic solvent, so the dielectric system can be fabricated on a layer of solution processable organic semiconductors such as poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). The OFET shows a field-effect mobility of 3.4 × 10−3 cm2/Vs,a threshold voltage of − 1 V, and an on/off current ratio of 5.9 × 102. We successfully observed low-voltage operation in OFETs with this dielectric system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eb99619cc5475ac7dc8aa047489413eb https://doi.org/10.1080/15421400701548282 Zobrazit plný text záznamu