Hybrid optoelectronic synaptic functionality realized with ion gel-modulated In2O3 phototransistors
| Autor: | Waleed Alquraishi, Yang Chen, Yongli Gao, Juxiang Wang, Ling-an Kong, Jia Sun, Weijie Qiu, Ying Fu |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Biomaterials law Materials Chemistry Electronics Electrical and Electronic Engineering Dynamic logic (digital electronics) Artificial neural network business.industry Transistor General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Semiconductor Synaptic plasticity Excitatory postsynaptic potential Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Organic Electronics. 71:72-78 |
| ISSN: | 1566-1199 |
| Popis: | Artificial synaptic devices have raised the concern of many researchers in the field of neural computing and artificial neural network. Ion gel-modulated synaptic transistors with solution-processed In2O3 semiconductors are demonstrated in this paper. The devices show good electrical performance, including a low operating voltage of 3 V and a large Ion/Ioff ratio of 3.86 × 105. More importantly, a series of basic biosynaptic behaviors, such as excitatory post-synaptic current (EPSC), synaptic plasticity, high pass filtration, and memory can be generated applying a presynaptic voltage or light pulses. Furthermore, a dynamic logic function was demonstrated by applying spatiotemporally related hybrid optoelectronic pulses. This study can pave a way for the development of hybrid optoelectronic artificial neural networks and open up a new strategy for further advances in synaptic electronics. |
| Databáze: | OpenAIRE |
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