Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate

Autor: Alan Mosley, Joachim Grupp, Monika M. Voigt, Alasdair J. Campbell, Simon Springer, Fanshun Meng, Ulrike Brokmann, Iain McCulloch, Huguette Penxten, Dae-Young Chung, Rizwan U. A. Khan, Jean Manca, Laurence Lutsen, Dagmar Hülsenberg, Olivier Douheret, Alexander Guite, Donal D. C. Bradley, Cécile Barron, Nicolas Blanckaert, Wolfgang Bock, Karin Sönnichsen, Joachim H. G. Steinke, Steve Tierney
Rok vydání: 2010
Předmět:
Zdroj: Advanced Functional Materials. 20:239-246
ISSN: 1616-3028
1616-301X
DOI: 10.1002/adfm.200901597
Popis: The mass production technique of gravure contact printing is used to fabricate state-of-the art polymer field-effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure-printed: the semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom-contact/top-gate geometry, an on/off ratio of 10 4 and a mobility of 0.04cm 2 V -1 s -1 are achieved. This rivals the best top-gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min -1 on a flexible polymer substrate demonstrates that very high-volume, reel-to-reel production of organic electronic devices is possible.
Databáze: OpenAIRE
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