Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications
| Autor: | Hyunsang Hwang, Hyundoek Yang, Sanghun Jeon, Dae-Gyu Park |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Gate dielectric General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Equivalent oxide thickness Chemical vapor deposition law.invention Capacitor chemistry X-ray photoelectron spectroscopy law Transmission electron microscopy Optoelectronics High-resolution transmission electron microscopy business |
| Zdroj: | Japanese Journal of Applied Physics. 41:2390-2393 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.41.2390 |
| Popis: | We investigated electrical and material properties of an untrathin nanolaminate (Al2O3/ZrO2/Al2O3) structure, prepared by atomic-layer chemical vapor deposition (ALCVD), for use in metal-oxide-semiconductor gate dielectric applications. The properties of nanolaminate were characterized by various technique such as high-resolution transmission electron microscopy (HRTEM), medium-energy ion scattering (MEIS), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and electrical analysis of MOS capacitors. Compared with the roughness of ZrO2 on bare silicon, ZrO2 on Al2O3 shows negligible roughness confirmed by AFM and HRTEM. Excellent electrical characteristics such as an equivalent oxide thickness (EOT) of 10.2 A and a leakage current density of 3×10-4 A/cm2 were obtained at 1 V below the flatband voltage. The conduction mechanism of nanolaminate can be explained by trap-assisted tunneling through ZrO2 and direct tunneling through Al2O3. |
| Databáze: | OpenAIRE |
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