Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd3 –xMnxAs2 Films
| Autor: | B. A. Aronzon, A. A. Kazakov, L. N. Oveshnikov, A. B. Davydov, S. F. Marenkin, A. B. Mekhiya, A. I. Ril |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Condensed matter physics Magnetoresistance Doping Dirac (software) Cadmium arsenide 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Semimetal Electronic Optical and Magnetic Materials Weak localization chemistry.chemical_compound chemistry 0103 physical sciences Thin film 0210 nano-technology Electronic band structure |
| Zdroj: | Semiconductors. 53:1439-1444 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Thin films of solid solutions based on the three-dimensional Dirac semimetal Cd3As2 with the addition of manganese are investigated. Cd3 –xMnxAs2 films (x = 0, 0.05, and 0.1) 50–70 nm in thickness are formed on a glassceramic substrate using vacuum-thermal deposition from cadmium arsenide ingots doped by Mn and fabricated by direct alloying elements by the vacuum-cell method. The temperature and magnetic-field dependences of the resistance are measured and the transport parameters of the films under study are determined. Positive magnetoresistance of the characteristic shape corresponding to the contribution of the weak antilocalization effect is observed for films with x = 0 and 0.05. The contribution from the weak localization effect is observed at a higher Mn content (x = 0.1). This change in the quantum correction type as applied to topological semimetals points to reconstruction of the band structure and transition from the Dirac semimetal state into a trivial semiconductor phase, which corresponds to the critical Mn content xc ~ 0.07 in this case. |
| Databáze: | OpenAIRE |
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