O2-exposure and light-irradiation properties of picene thin film field-effect transistor: A new way toward O2 gas sensor
| Autor: | Yumiko Kaji, Yoshihiro Kubozono, Yasuyuki Sugawara, Ritsuko Eguchi, Shin Gohda, Shuhei Oikawa, Noriko Komura, Keiko Ogawa, Kouki Akaike, Hidenori Goto |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor Metals and Alloys Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Wavelength Picene chemistry law Materials Chemistry Optoelectronics Field-effect transistor Irradiation Electrical and Electronic Engineering Thin film business Instrumentation AND gate |
| Zdroj: | Sensors and Actuators B: Chemical. :544-549 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2012.05.030 |
| Popis: | Transistor characteristics and O2 gas sensing properties are investigated for picene thin film field-effect transistors (FETs) with ZrO2, Ta2O5, HfO2 and BaxSr1−xTiO3 (x = 0.4). The low-voltage operation is achieved using the above oxides with high gate dielectric constant, contrary to SiO2 gate dielectric. The O2 gas sensing is achieved at 11 s intervals without any bias stress by an application of pulse drain and gate voltages (VD and VG), in contrast to previous result in which the O2 gas sensing was performed at least at 1 h step because of bias stress effect. The actual O2 sensing-speed in the picene thin film FET was ∼10 s for 3.8 Torr O2, and the O2 sensing limit was concluded to be 0.15–0.38 Torr. Furthermore, it has been found that the O2 sensing properties are observed only under irradiation of light with wavelength below 400 nm. From the result, we have presented two scenarios for O2 sensing mechanism in picene thin film FET. |
| Databáze: | OpenAIRE |
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