MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature

Autor:	Edward Yi Chang, H.L. Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, Hung Wei Yu, Ramesh Kumar Kakkerla, Deepak Anandan
Rok vydání:	2017
Předmět:	Materials science Silicon chemistry Annealing (metallurgy) business.industry Nanowire chemistry.chemical_element Optoelectronics Metalorganic vapour phase epitaxy business Volumetric flow rate
Zdroj:	Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eb7a1eb1578b07248c2ff95a5779c689 https://doi.org/10.7567/ssdm.2017.m-5-03 Zobrazit plný text záznamu