| Autor: |
Neeraj Nepal, Tanja Paskova, Pavel Frajtag, Salah M. Bedair, Nadia A. El-Masry |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. 367:88-93 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/j.jcrysgro.2012.12.039 |
| Popis: |
We demonstrate InxGa1−xN/GaN light emitting diode structures with different sets of multifacet semipolar formation grown laterally on m-plane sidewalls formed by stripe patterning on preliminary grown c-plane GaN template. It was found that regrowth on shallow side walls within the GaN template resulted in a single semipolar (11¯01) facet, while deeper side walls led to multifacet semipolar formation. Very deep etching through the entire GaN template reaching the underlying sapphire substrates resulted in a combination of semipolar (11¯01) and nonpolar (11¯00) facets. The results indicate that the depth of the groove patterning can be used as a tool for controlling the set of semipolar facet formation. In addition, the growth rate in different crystallographic directions was studied and possible factors affecting the growth rates are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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