Planarization of topography with spin-on carbon hard mask
| Autor: | Yusuke Hama, Takanori Kudo, Go Noya, Munirathna Padmanaban, Shigemasa Nakasugi, Maki Ishii |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Semiconductor device fabrication chemistry.chemical_element Nanotechnology 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences 010309 optics Semiconductor chemistry Chemical-mechanical planarization 0103 physical sciences Thermal Multiple patterning Optoelectronics Node (circuits) 0210 nano-technology business Carbon |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2218504 |
| Popis: | Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterning technology is used and planarization of topography become more important and challenging ever before. In order to develop next generation SOC, one of focuses is planarization of topography. SOC with different concepts for improved planarization and the influence of thermal flow temperature, crosslink, film shrinkage, baking conditions on planarization and filling performance are described in this paper. |
| Databáze: | OpenAIRE |
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