Conversion gain and noise in microwave analog frequency dividers using various types of FET

Autor:	J.F. Sautereau, Olivier Llopis, H. Amine, Robert Plana, J. Graffeuil
Rok vydání:	1993
Předmět:	Engineering business.industry Infrasound Transconductance Phase noise Electronic engineering MESFET Field-effect transistor High-electron-mobility transistor business Noise (electronics) Microwave
Zdroj:	23rd European Microwave Conference, 1993.
DOI:	10.1109/euma.1993.336701
Popis:	Analog frequency dividers using Field Effect Transistors have been investigated with respect to various device structures (MESFET, HEMT and PHEMT). It was found that the transconductance parameter value (Idss/Vt2) essentially governs the capability of achieving a large conversion gain. Also, there was no added phase noise under normal operating conditions. Otherwise it mostly depends on the device low frequency noise and nonlinearity. Finally some guidelines for selecting the most appropriate device structures are outlined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eb62d555b47592bb615c102af45fe1d5 https://doi.org/10.1109/euma.1993.336701 Zobrazit plný text záznamu