Photoetching method that provides improved silicon-on-insulator layer thickness uniformity in a defined area
Autor: | Kentaro Kawai, Miho Morita, Yasunori Nakamukai, Mizuho Morita, Cassia Tiemi Azevedo, Junichi Uchikoshi, Kenta Arima, Yuki Miyata |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Silicon Silicon on insulator chemistry.chemical_element 02 engineering and technology Thermal treatment 01 natural sciences law.invention Optics law Etching (microfabrication) 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Thermal oxidation business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Exfoliation joint Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Projector chemistry Optoelectronics 0210 nano-technology business Layer (electronics) |
Zdroj: | Microelectronic Engineering. 180:93-95 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2017.06.008 |
Popis: | A new method to improve the thickness uniformity of a silicon-on-insulator layer in a defined area by photoetching with N -fluoropyridinium salts using a projector was proposed. The method involved initial calculation of the red–green–blue tone distribution from the top silicon layer thickness distribution to be etched using the relationship between the etching depth and red–green–blue tone in a projector. Photoetching was then conducted by projection of an image with the required tone distribution onto a silicon layer surface coated with N -fluoropyridinium salts. The uniformity of silicon layers with a thickness of less than 10 nm was improved in an area of approximately 20 × 20 mm by photoetching after prior thinning by thermal oxidation and wet etching. The developed method enables the thickness uniformity in a defined area to be improved while avoiding exfoliation of the silicon layer or the formation of silicon islands in subsequent thermal treatment. In addition, this method has the potential to be cost-effective because it uses a projector. |
Databáze: | OpenAIRE |
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