The Effects of Selectively Absorbing Dielectric Layers and Beam Shaping on Recrystallization and Fet Characteristics in Laser Recrystallized Silicon on Amorphous Substrates

Autor:	H. G. Parks, George Edward Possin, Y.S. Liu, S. W. Chiang
Rok vydání:	1982
Předmět:	Fused quartz Materials science Silicon business.industry chemistry.chemical_element Recrystallization (metallurgy) Chemical vapor deposition Dielectric Laser Threshold voltage law.invention Amorphous solid chemistry law Optoelectronics business
Zdroj:	MRS Proceedings. 13
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-13-549
Popis:	Selective absorption, using patterned dielectric films, and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the laser heated region was used to optimize and control the recrystallization. MOSFETs were fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process. Devices with various channel lengths and widths were fabricated, and the dependence of threshold voltage, channel mobility, and leakage on recrystallization conditions and device dimensions was studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eb554a0e1ef6158709904db771204ee0 https://doi.org/10.1557/proc-13-549 Zobrazit plný text záznamu Full text from SpringerLink