Analytical study of non-linear transport across a semiconductor-metal junction
| Autor: | N. M. R. Peres |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Surface (mathematics)
Density matrix Physics Condensed matter physics business.industry Biasing 02 engineering and technology Function (mathematics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Semiconductor Quadratic equation 0103 physical sciences 010306 general physics 0210 nano-technology business Constant (mathematics) Surface states |
| Zdroj: | The European Physical Journal B. 72:183-191 |
| ISSN: | 1434-6036 1434-6028 |
| DOI: | 10.1140/epjb/e2009-00348-3 |
| Popis: | In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green's function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as function of the bias voltage due to strong resonances present in the Green's functions of the junction sites. The surface Green's function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given. |
| Databáze: | OpenAIRE |
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