| Autor: |
Dmitry V. Tarkhin, Pan-Tzu Chang, Eugeny A. Girnnov, Yury Georgievich Shreter, Vladislav E. Bougrov, Sergey Stepanov, Natalia Bochkareva, Wang Nang Wang, Y. T. Rebane, Pei Jih Wang |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.476553 |
| Popis: |
Effect of degradation processes on transient currents in LEDs has been studied. It has been found that transient currents are several orders of magnitude higher than steady-state currents. The transient current time dependencies are non-exponential and show a distribution of relaxation times in the range of 1-100 microseconds. The charge associated with the transient currents is Q ~3x10 -10 C which corresponds to high number of carrier traps N t ~ 2x10 9 in the investigated chips. For one-year old chips an increase of charge and trap number by ~ 25% has been found compared to the fresh chips. Two probable reasons have been suggested to explain the observed increase of number of carrier traps: first one is related to increase of the number of trap sites at dislocations, and second one is a gradual phase separation process in quantum wells resulting in degradation of their quality. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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