Excess carrier concentration in silicon devices and wafers: How bulk properties are expected to accelerate light and elevated temperature degradation
| Autor: | A. N. McPherson, J. F. Karas, D. L. Young, I. L. Repins |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | MRS Advances. 7:438-443 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/s43580-022-00222-5 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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