| Popis: |
For the next generation of High Energy Physics (HEP) Experiments silicon microstrip detectors working in harsh radiation environments with excellent performances are necessary. The irradiation causes bulk and surface damages that modify the electrical properties of the detector. Solutions like AC coupled strips, overhanging metal contact, 〈100〉 crystal lattice orientation, low resistivity n‐bulk and Oxygenated substrate are studied for rad‐hard detectors. The paper presents an outlook of these technologies. |
