Bulk-defect dependent adsorption on a metal oxide surface: S/TiO2(110)
| Autor: | Ulrike Diebold, Phillip Sprunger, Carl A. Ventrice, H. Geisler, E.L.D. Hebenstreit, Wilhelm Hebenstreit |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Surface diffusion
Inorganic chemistry technology industry and agriculture Oxide chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Sulfur Oxygen Surfaces Coatings and Films law.invention chemistry.chemical_compound Adsorption chemistry X-ray photoelectron spectroscopy Chemisorption law Materials Chemistry Physical chemistry Scanning tunneling microscope |
| Zdroj: | Surface Science. 486:L467-L474 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/s0039-6028(01)01067-6 |
| Popis: | The adsorption of molecular sulfur on TiO 2 (1 1 0)(1×1) has been studied with scanning tunneling microscopy and photoelectron spectroscopy. At room temperature S binds dissociatively to 5-fold coordinated Ti atoms and oxygen vacancies. At elevated temperatures (120–440°C) sulfur replaces surface oxygen atoms. Evidence was found that the reduction state of TiO 2 crystals strongly affects the surface coverage of S at elevated temperatures. The rate of the O–S site exchange is kinetically limited by the arrival of diffusing bulk defects at the surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect