Design and Characterizations of the Radiation-Hardened XCR4C ASIC for X-Ray CCDs for Space Astronomical Applications
| Autor: | Wenxin Zhao, Jiantou Gao, Hainan Liu, Yong Chen, Chunlin Wang, Bo Li, Jia Huo, Yumei Zhou, Jiajun Luo, Bo Lu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Physics
Nuclear and High Energy Physics Correlated double sampling 010308 nuclear & particles physics business.industry Integrated circuit 01 natural sciences Noise (electronics) law.invention Nuclear Energy and Engineering Integral nonlinearity Application-specific integrated circuit CMOS law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Radiation hardening Energy (signal processing) |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:1175-1184 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2020.2993402 |
| Popis: | Correlated double sampling (CDS) circuits are essential to processing the X-ray charge-coupled devices (CCDs) that have been widely used in the modern X-ray astronomical field. For timing observations, both energy resolution and timing resolution are of great importance. We are developing the XCR4C application-specific integrated circuit (ASIC), which is a fully customized four-channel radiation-hardened CDS ASIC targeting the readout of X-ray CCDs, for future space astronomical missions. The ASIC is implemented in a differential switched-capacitor architecture, making it highly linear, low power, immune to common-mode noise and interferences, as well as easily configurable. To combat the harsh low-earth-orbit space environment, some radiation-hardening techniques are applied, including the process hardening method, even-finger double-side bulk butting, and pseudo-double guard ring layout techniques. The XCR4C ASIC was fabricated with 0.35- $\mu \text{m}$ 2P4M CMOS technology with an epitaxial layer. The ASIC achieves a maximum 23-ppm integral nonlinearity and 5.8 e− rms equivalent noise charge under a typical 1-MHz pixel rate and only consumes 50 mW approximately from a single 3.3-V supply voltage. The results from radiation hardness assurance testing show that the ASIC has at least a total ionizing dose tolerance of 300 krad(Si), and no single-event latchup has been found up to a linear energy transfer of $81.35~\text {MeV}\cdot \text {cm}^{2}$ /mg with a total fluence up to $1.68\times 10^{7}$ ions/cm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|