Electrical characterisation of silicon wafer bonding structures
| Autor: | George J. Papaioannou, J. Stoimenos, Dimitris Tsoukalas, Panagiotis Dimitrakis, S. Hatzandroulis |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Silicon Wafer bonding Doping Analytical chemistry Oxide chemistry.chemical_element Activation energy Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Capacitor chemistry.chemical_compound chemistry law Anodic bonding Materials Chemistry Electronic engineering Wafer Electrical and Electronic Engineering |
| Zdroj: | Solid-State Electronics. 42:201-204 |
| ISSN: | 0038-1101 |
| Popis: | Metal–insulator–semiconductor–insulator–semiconductor (MISIS) capacitors, fabricated using direct wafer bonding, have been used for the evaluation of the electrical properties of a silicon film (4.1 μm), a buried oxide (42 nm) and its interfaces. After the dry oxidation of the film, the grown oxide has a thickness of 25 nm, and the doping concentration of the film increased by one order of magnitude. The minority carrier generation mechanism was detected. Its activation energy (554 meV), denotes the high-quality of the interfaces. A deep level (315 meV) was found by DLTS. The most probable sources of this trap are mainly the divacancy-phosphorus complexes presented in the Si film. The concentration of dislocations in Si film is very low ( |
| Databáze: | OpenAIRE |
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