In situ electrochemical characterization of porous n ‐InP (100)

Autor: Anne-Marie Goncalves, Arnaud Etcheberry, Charles Mathieu, Michel Herlem, Alexandra Eb, C. David, Lionel Santinacci, I. Gerard
Rok vydání: 2007
Předmět:
Zdroj: physica status solidi c. 4:1898-1902
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200674314
Popis: Porous structures have been anodically grown onto n -InP (100) in HCl. Surface chemistry and pore morphology have been respectively studied by X-ray photoelectron spectroscopy and scanning electron microscopy but in situ electrochemical investigations have been emphasized. Capacitance and photocurrent experiments have been performed while the porous etching occurred. No modifications of the electronic structure (flat band potential remains constant) are observed during the pore formation. However, for high dissolution charges, the photocurrent spectra are sharpened because the porous films behave like electrically “dead layers”. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE