In situ electrochemical characterization of porous n ‐InP (100)
Autor: | Anne-Marie Goncalves, Arnaud Etcheberry, Charles Mathieu, Michel Herlem, Alexandra Eb, C. David, Lionel Santinacci, I. Gerard |
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Rok vydání: | 2007 |
Předmět: | |
Zdroj: | physica status solidi c. 4:1898-1902 |
ISSN: | 1610-1642 1862-6351 |
DOI: | 10.1002/pssc.200674314 |
Popis: | Porous structures have been anodically grown onto n -InP (100) in HCl. Surface chemistry and pore morphology have been respectively studied by X-ray photoelectron spectroscopy and scanning electron microscopy but in situ electrochemical investigations have been emphasized. Capacitance and photocurrent experiments have been performed while the porous etching occurred. No modifications of the electronic structure (flat band potential remains constant) are observed during the pore formation. However, for high dissolution charges, the photocurrent spectra are sharpened because the porous films behave like electrically “dead layers”. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: | OpenAIRE |
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