Oxidation rates of aluminium nitride thin films: effect of composition of the atmosphere
| Autor: | Olga Rac-Rumijowska, Andrej Vincze, Adrian Zakrzewski, R. Korbutowicz, Andrzej Stafiniak |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Thermal oxidation Materials science Aluminium nitride Scanning electron microscope Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Wet oxidation Electrical and Electronic Engineering Thin film 0210 nano-technology Spectroscopy Refractive index |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:13937-13949 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-017-7243-5 |
| Popis: | This paper presents an analysis of thermal oxidation kinetics for Aluminium nitride (AlN) epitaxy layers using three methods: dry, wet and mixed. The structures thus obtained were examined by means of scanning electron microscope, energy-dispersive X-ray spectroscopy, spectroscopic ellipsometry and secondary ions mass spectroscopy. On the basis of the investigation results, a model of layer structure after oxidation was proposed, the thickness of the layers was assessed and the refractive indices for particular layers were determined. The modelling results prove that AlN thermal oxidation in dry oxygen follows the logarithmic law, wet oxidation follows the parabolic law, whereas mixed oxidation follows the linear law. |
| Databáze: | OpenAIRE |
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