| Autor: |
N. M. Goncharuk, Anatoliy Evtukh, V.E. Chayka, V.G. Litovchenko, Yu.M. Litvin |
| Rok vydání: |
1999 |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:655 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.590612 |
| Popis: |
Theoretical and experimental investigations of electron field emission from silicon-based resonance-tunneling layered structures have been performed. Numerical simulation of resonant and nonresonant field emission in Si-SiO2-Si*-SiO2 multilayer cathodes (MLCs) with quantum well (QWs) which takes into account the tunneling process of electrons from the three-dimensional electron density state of the emitter conductive band has been carried out. The influence of the external electric field, temperature, MLC parameters and emitter doping on the resonant characteristics of the current was analyzed. Computer simulation has shown that the peak current density of MLCs with optimal thin barriers and sufficiently wide QW layers at a resonant value of the electric field can sometimes exceed the current density of conventional cathodes. If the width of the QW is increased, the number of current resonant maxima (CRM) is multiplied. The CRM is shifted towards the lower electric field values and become more narrow if b... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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