Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
| Autor: | E. A. Tarasova, A. V. Hananova, S. V. Obolensky, O. E. Galkin, A. B. Makarov |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology High-electron-mobility transistor Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Fluence Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Optoelectronics Irradiation 0210 nano-technology business Neutron irradiation Electron distribution |
| Zdroj: | Semiconductors. 51:1490-1494 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617110264 |
| Popis: | A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 1014 cm–2 is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined. |
| Databáze: | OpenAIRE |
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