Simple technique to determine the drain temperature in GaAs metal semiconductor field effect transistor
| Autor: | Mohamed Kameche, Mohamed Feham |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Electron mobility
Materials science business.industry General Physics and Astronomy Drain-induced barrier lowering Carrier lifetime Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide chemistry.chemical_compound chemistry Operating temperature Optoelectronics MESFET Field-effect transistor business Voltage |
| Zdroj: | Journal of Applied Physics. 93:6344-6346 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1566475 |
| Popis: | The effects of the operating temperature T and the drain voltage on the drain temperature in GaAs metal semiconductor field effect transistor (MESFET) are a serious problem, which do not receive enough attention in the scientific literature in the last years. This article presents a simple technique to determine the drain temperature by setting the equality between the field-dependent diffusivity-to-mobility ratio (nonlinear relation) and the constant ratio linear modeling. So, we investigate the impact of the high-field electron diffusivity model in GaAs on the characteristics of MESFETs. Two dimensional numerical simulation is used to describe significant physics in the characteristics for 0.5 μm MESFET GaAs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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