Effect of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells
| Autor: | Mau-Phon Houng, Na Fu Wang, Ming Hao Chien, Feng Hao Hsu, Yu Zen Tsai |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Equivalent series resistance Open-circuit voltage Energy conversion efficiency Analytical chemistry Heterojunction Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Power (physics) Sputtering Electrical and Electronic Engineering Short circuit Temperature coefficient |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 26:755-761 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-014-2460-7 |
| Popis: | This study investigates the effects of sputtering power on the performance of p-Ni1−xO:Li/n-Si heterojunction solar cells (HJSCs). The results of this study indicate a strong dependence of the cell characteristics on the sputtering power. Extremely high or low sputtering power generates higher interface state density (D it ), resulting in the lowering of open circuit voltage (V oc ) and fill factor (FF). The cell fabricated at a sputtering power of 100 W has the lowest D it of 7.08 × 1011 cm−2 eV−1, corresponding to the highest conversion efficiency (η) of 4.30 % [short circuit current density (J sc ): 18.06 mA cm−2, V oc : 390 mV, FF: 61.1 %, series resistance (R s ): 4.3 Ωcm2 and shunt resistance (R sh ): 478.75 Ωcm2]. Furthermore, the cell exhibits a considerably poor temperature coefficient of −0.70 %/ °C (J sc : +0.07 %/°C, V oc : −0.52 %/°C and FF: −0.29 %/°C) when compared with conventional solar cells. Further improvement in the D it of the cell is highly imperative for developing p-Ni1−xO:Li/n-Si HJSCs with a high conversion efficiency and a good temperature coefficient. |
| Databáze: | OpenAIRE |
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