Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures
| Autor: | Gian Domenico Licciardo, Tobias Erlbacher, Alfredo Rubino, Anton J. Bauer, Luigi Di Benedetto, Lothar Frey, Christian D. Matthus |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Mechanical Engineering 010401 analytical chemistry Semiconductor device modeling 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Mechanics of Materials Optoelectronics General Materials Science 0210 nano-technology business Diode |
| Zdroj: | Materials Science Forum. 963:572-575 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.963.572 |
| Popis: | In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic VD-T is highly linear and it is dominated by the typical dependence of the p-i-n diode voltage on the temperature. The sensor sensitivity is -4.48mV/K for a diode current of 2nA with a maximum error of 4.3K across the full temperature range. Although 4H-SiC p-i-n are mainly focused on very high temperature applications, our analysis on the performance of bipolar diodes at low temperatures highlights its feasibility as temperature sensor for aerospace and high altitude applications where cryogenic temperatures are achieved. |
| Databáze: | OpenAIRE |
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