Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
| Autor: | Bernard Chenevier, Wahib Saikaly, I. Matko, Fabrice Letertre, Jean-Marie Bluet, Roland Madar |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Photoluminescence business.industry Mechanical Engineering Condensed Matter Physics Epitaxy Metal Crystallography Mechanics of Materials Sic substrate Transmission electron microscopy visual_art visual_art.visual_art_medium Optoelectronics General Materials Science business Smart Cut Single crystal Layer (electronics) |
| Zdroj: | Materials Science Forum. :255-258 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.556-557.255 |
| Popis: | QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence. |
| Databáze: | OpenAIRE |
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