Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing
| Autor: | M Bucchia, Pierre Boher, C. Guillotin, Christophe Defranoux |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon business.industry Infrared Metals and Alloys chemistry.chemical_element Infrared spectroscopy Surfaces and Interfaces Dielectric Surfaces Coatings and Films Electronic Optical and Magnetic Materials Metrology Characterization (materials science) Optics chemistry Ellipsometry Nano Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. 450:173-177 |
| ISSN: | 0040-6090 |
| Popis: | A new automated 300-mm metrology tool using infrared spectroscopic ellipsometry is presented. After a description of the specifications of the instrument with special attention on the spot size, the instrument specifications are described and different applications of the technique related to the IC technology are presented. We show in particular that physical and chemical information on new low-k dielectric materials can be obtained independently. Depth information can also be deduced in a non-destructive way for contact trenches in dielectric layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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