Autor: |
B. Ebersman, G.D. Berg, David Harame, D. Jadus, Robert A. Groves, Keith M. Walter, D.A. Sunderland, Gregory G. Freeman |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting. |
DOI: |
10.1109/bipol.1997.647350 |
Popis: |
A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features built into HSPICE. DC and AC fit is good over a wide range in emitter sizes. Features of IBM's HBT technology which make scaling work are discussed. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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