Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
| Autor: | Taiichi Otsuji, Mitsuhiro Hanabe, Eiichi Sano, Yahya Moubarak Meziani |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Waves in plasmas Transistor General Engineering General Physics and Astronomy Self-oscillation High-electron-mobility transistor Plasma Grating Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies Optics law Optoelectronics business Plasmon Beam (structure) |
| Zdroj: | Japanese Journal of Applied Physics. 46:2409-2412 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 µm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for different gate voltages. The result was interpreted as a clear signature of the self-oscillation of plasma waves. |
| Databáze: | OpenAIRE |
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