Rapid thermal processing of silicon wafers with emissivity patterns
| Autor: | F.P. Klemens, Peter Frisella, William M. Mansfield, Anthony T. Fiory, Nuggehalli M. Ravindra, T.W. Sorsch, Aditya Agarwal, Markus Rabus, E. Ferry, J.F. Miner, R. Cirelli |
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| Rok vydání: | 2006 |
| Předmět: |
Thermal oxidation
Incandescent light bulb Materials science Silicon business.industry chemistry.chemical_element Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Radiant heating chemistry law Rapid thermal processing Materials Chemistry Emissivity Optoelectronics Wafer Infrared heater Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 35:877-891 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating methods. The work reported in this paper compares the effect of emissivity test patterns on wafers heated by two RTP methods: (1) a steadystate furnace or (2) arrays of incandescent lamps. Method I was found to yield reduced temperature variability, attributable to smaller temperature differences between the wafer and heat source. The temperature was determined by monitoring test processes involving either the device side or the reverse side of the wafer. These include electrical activiation of implanted dopants after rapid thermal annealing (RTA) or growth of oxide films by rapid thermal oxidation (RTO). Temperature variation data are compared with a model of radiant heating of patterned wafers in RTP systems. |
| Databáze: | OpenAIRE |
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