Direct-coupled FET logic circuits on InP
| Autor: | S.C. Shunk, Mark D. Feuer, J.-H. Huang, Tallis Y. Chang, T.A. Vang, K. Brown-Goebeler, Y. He |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Propagation delay Integrated circuit Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry law Logic gate Indium phosphide Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Indium gallium arsenide Molecular beam epitaxy |
| Zdroj: | IEEE Electron Device Letters. 12:98-100 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | A process technology for direct-coupled FET logic (DCFL) circuits on InP substrates, based on enhancement-mode InGaAs/InAlAs heterostructure-insulated-gate FETs (HIGFETs) is discussed. Its performance was demonstrated by fabricating 11- and 19-stage ring oscillators. The circuits were fabricated on undoped lattice-matched heterostructures grown by molecular beam epitaxy (MBE), using a refractory-gate process with self-aligned sidewalls to achieve a lightly-doped-drain (LDD) structure. For a gate length of 1.2 mu m, with V/sub dd/=2 V, the best propagation delay observed was 23 ps/stage, with associated power of 2.2 mW/stage. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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