Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

Autor:	N. A. Tursunov, K. A. Begmatov, A. Kh. Sadikov, M. Karimov, A. K. Karakhodzhaev, Sh. A. Makhmudov, Sh. Makhkamov
Rok vydání:	2009
Předmět:	Materials science Condensed matter physics Silicon Annealing (metallurgy) Photoconductivity Doping General Physics and Astronomy chemistry.chemical_element Thermal treatment Conductivity Nuclear magnetic resonance chemistry Impurity Rectangular potential barrier
Zdroj:	Russian Physics Journal. 52:448-451
ISSN:	1573-9228 1064-8887
Popis:	The relaxation kinetics of photoconductivity in neutron-doped silicon (NDS) of the p-type is discussed. It is found that the relaxation process in the compensated p-Si differs from that in the reference p-Si sample. The difference is explained on the basis of concept of different micrononuniformity of the material conductivity. A method based on studying the dependences of charge-carrier mobility on annealing time is developed for determining thermal annealing of structural defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eaae77ede2ca1ded4dfad91cd6d5846e https://doi.org/10.1007/s11182-009-9253-0 Zobrazit plný text záznamu Plný text ve formátu PDF