Growth of quaternary AlInGaN with various TMI molar rates
| Autor: | Yuan Chieh Lu, Ray-Ming Lin, Sheng Po Chang, Sheng Fu Yu, Yu Zung Chiou, S. J. Chang, Yung-Hsiang Lin |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Diffraction
Photoluminescence Materials science Analytical chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Volumetric flow rate Inorganic Chemistry Crystallography Laser linewidth chemistry.chemical_compound chemistry Materials Chemistry Sapphire Trimethylindium Indium |
| Zdroj: | Journal of Crystal Growth. 312:1920-1924 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2010.03.027 |
| Popis: | We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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