Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability
Autor: | Andreas Kerber, B. Min, Maria Toledano-Luque, K. Nagahiro, S. Cimino, Zakariae Chbili, P. Paliwoda, Durgamadhab Misra, T. Nigam, Luigi Pantisano |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science business.industry 01 natural sciences Electronic Optical and Magnetic Materials Reliability (semiconductor) Modulation Logic gate 0103 physical sciences Degradation (geology) Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality Self heating business Hot carrier degradation Hot-carrier injection |
Zdroj: | IEEE Transactions on Device and Materials Reliability. 19:249-254 |
ISSN: | 1558-2574 1530-4388 |
Popis: | This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation. |
Databáze: | OpenAIRE |
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