Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn
| Autor: | Michael Thompson, Paul S. Peercy, S. R. Stiffler, Jeffrey Y. Tsao, David E. Hoglund, Michael J. Aziz |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Silicon Kinetics Analytical chemistry chemistry.chemical_element Non-equilibrium thermodynamics Thermodynamics Condensed Matter Physics Kinetic energy Inorganic Chemistry Partition coefficient Planar chemistry Materials Chemistry Tin Nonlinear Sciences::Pattern Formation and Solitons Order of magnitude |
| Zdroj: | Journal of Crystal Growth. 109:107-112 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(91)90164-z |
| Popis: | During rapid solidification, nonequilibrium interface kinetics alter the predictions of the Mullins-Sekerka theory for the stability of a planar interface against cellular breakdown. The velocity-dependence of the partition coefficient and of the Sn concentration at the onset of cellular breakdown have been measured during pulsed laser melting of Si-Sn alloys. The Mullins-Sekerka theory is modified by inserting a velocity-dependent partition coefficient and a velocity-dependent slope of the “kinetic liquids”, both of which are extracted from the continuous growth model for interface kinetics. These nonequilibrium interface kinetic effects increase the predicted critical concentration for cellular breakdown by two orders of magnitude for Sn in Si, and account fairly well for the experimental results. |
| Databáze: | OpenAIRE |
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