Influence of SiO2 surface energy on the performance of organic field effect transistors based on highly oriented, zone-cast layers of a tetrathiafulvalene derivative

Autor:	David B. Amabilino, Jaroslaw Jung, Pawel Miskiewicz, Jaume Veciana, Concepció Rovira, Elba Gomar-Nadal, Waldemar Maniukiewicz, Marta Mas-Torrent, Jacek Ulanski, Sylwia Kotarba, Tomasz Marszalek
Rok vydání:	2008
Předmět:	Materials science business.industry Silicon dioxide Analytical chemistry General Physics and Astronomy Dielectric Surface energy Active layer chemistry.chemical_compound chemistry Optoelectronics Field-effect transistor Electrical measurements business Layer (electronics) Tetrathiafulvalene
Zdroj:	Journal of Applied Physics. 104:054509
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.2968441
Popis:	In this paper we present that the surface energy of silicon dioxide employed as the dielectric in bottom gate organic field effect transistors has large impact on the device performance. By the use of the zone-casting simple solution processing technique, we ensured reproducibility of active layer preparation confirmed by the atomic force microscopy and x-ray diffraction that showed high crystalline quality. Electrical measurements revealed that charge carrier mobility based on highly ordered zone-cast tetrakis-(octadecylthio)-tetrathiafulvalene layer was increased 30 times to 0.2 cm2/V s, when dielectric surface energy decreased from 51.8 to 40.1 mN/m.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea8f3e89dac99e3fb0069a2547b9f98c https://doi.org/10.1063/1.2968441 Zobrazit plný text záznamu