A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire

Autor:	A. Estes Wickenden, Scott A. Ecelberger, T. J. Kistenmacher, D. K. Wickenden, T. O. Poehler
Rok vydání:	1992
Předmět:	Materials science Annealing (metallurgy) business.industry Nucleation Gallium nitride Nitride chemistry.chemical_compound chemistry Sapphire Sapphire substrate Optoelectronics Metalorganic vapour phase epitaxy business Layer (electronics)
Zdroj:	MRS Proceedings. 280
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-280-355
Popis:	Nucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea89b3c8f8935e350b97bf7f26b588cf https://doi.org/10.1557/proc-280-355 Zobrazit plný text záznamu Full text from SpringerLink