Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
| Autor: | Ch. Dua, M.-A. diForte-Poisson, Erwan Morvan, Daniel Donoval, Jaroslav Kováč, Peter Kordos, Ales Chvala, R. Šramatý |
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| Rok vydání: | 2011 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Schottky effect Wide-bandgap semiconductor General Physics and Astronomy Schottky diode Thermionic emission 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy 0103 physical sciences Optoelectronics 0210 nano-technology business Temperature coefficient Quantum tunnelling Leakage (electronics) |
| Zdroj: | Journal of Applied Physics. 109:063711 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300–820 K. The experimental data were analyzed considering different current-transport mechanisms, such as thermionic emission, generation-recombination, tunneling and leakage currents. From the fitting of experimental data it follows that the tunneling current dominates in whole temperature range. The thermionic emission becomes comparable to the tunneling current only at highest temperatures used. The barrier height of the Ni/InAlN/GaN Schottky diodes, evaluated from the thermionic emission current, shows a slightly negative temperature coefficient and its value at 300 K is 1.47 eV. Lower barrier heights were reported before, which follow from an incorrect evaluation of measured data without separation of individual current components. The dislocation density of about 2×109 cm−2 is obtained assuming dislocation governed tunneling current mechanism. |
| Databáze: | OpenAIRE |
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