MBE growth of room-temperature InAsSb mid-infrared detectors

Autor:	G. Glastre, A Rakovska, I. Prevot, Xavier Marcadet, Vincent Berger, Borge Vinter
Rok vydání:	2001
Předmět:	business.industry Photoconductivity Photodetector Flux Carrier lifetime Condensed Matter Physics Mole fraction Inorganic Chemistry chemistry.chemical_compound chemistry Ternary compound Materials Chemistry Optoelectronics Infrared detector business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :609-613
ISSN:	0022-0248
Popis:	Some key growth issues for InAsSb mid-infrared detectors are presented. We investigate the influence of growth temperature and Sb/As flux ratio on InAsSb alloy composition and on carrier lifetime. The Sb mole fraction in InAs1−xSbx depends linearly on the Sb flux using either As2 or As4 (0.02⩽x⩽0.16). However, the Sb incorporation rate is significantly lower using As2 flux. The carrier lifetime in thick InAsSb layers closely lattice-matched to GaSb is measured by time-resolved photoconductivity. The values obtained vary from 15 to 200 ns depending on growth conditions. The main result is that the carrier lifetime increases as the growth temperature decreases and seems to be limited by Shockley–Read recombinations. Finally, an InAs0.91Sb0.09 p–i–n photovoltaic detector is grown and operates at room temperature. A detectivity of 4.5×109 cm Hz / W at 3.39 μm and 250 K is measured. We show that the quality of the active region material ensures a sufficiently low generation–recombination current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ea7ac7c0e95d4f5efb8c7b990ec21781 https://doi.org/10.1016/s0022-0248(01)00782-5 Zobrazit plný text záznamu Full Text from ScienceDirect