Highly unidirectional Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers
| Autor: | Nathan J. Withers, Marek Osinski, Omar K. Qassim, Gennady A. Smolyakov, Chia-Yeh Li |
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| Rok vydání: | 2008 |
| Předmět: |
Fabrication
Materials science Condensed Matter::Other business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Ring (chemistry) law.invention Gallium arsenide Semiconductor laser theory Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Quantum dot Quantum dot laser Optoelectronics business Current density |
| Zdroj: | 2008 IEEE 21st International Semiconductor Laser Conference. |
| Popis: | Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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