Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect

Autor: Chenguang Liu, W.P. Tong, Y. Y. Xiu, T.Y. Kang, L. Hui, Jing Wang
Rok vydání: 2011
Předmět:
Zdroj: Journal of Alloys and Compounds. 509:1785-1789
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2010.10.040
Popis: [Xiu, Y. Y.; Liu, C. Z.; Hui, L.; Wang, J. J.] Shenyang Aerosp Univ, Shenyang 110136, Liaoning, Peoples R China. [Kang, T. Y.; Tong, W. P.] Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang, Peoples R China. [Liu, C. Z.] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.;Liu, CZ (reprint author), Shenyang Aerosp Univ, 37 Daoyi S St, Shenyang 110136, Liaoning, Peoples R China;chunzliu@yahoo.com wptong@mail.neu.edu.cn
Databáze: OpenAIRE