Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect
Autor: | Chenguang Liu, W.P. Tong, Y. Y. Xiu, T.Y. Kang, L. Hui, Jing Wang |
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Rok vydání: | 2011 |
Předmět: | |
Zdroj: | Journal of Alloys and Compounds. 509:1785-1789 |
ISSN: | 0925-8388 |
DOI: | 10.1016/j.jallcom.2010.10.040 |
Popis: | [Xiu, Y. Y.; Liu, C. Z.; Hui, L.; Wang, J. J.] Shenyang Aerosp Univ, Shenyang 110136, Liaoning, Peoples R China. [Kang, T. Y.; Tong, W. P.] Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang, Peoples R China. [Liu, C. Z.] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China.;Liu, CZ (reprint author), Shenyang Aerosp Univ, 37 Daoyi S St, Shenyang 110136, Liaoning, Peoples R China;chunzliu@yahoo.com wptong@mail.neu.edu.cn |
Databáze: | OpenAIRE |
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