Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
| Autor: | Peter Kordos, Damian Radziewicz, Rudolf Srnanek, Jaroslav Kováč, B. Sciana, J. Geurts, M. Lentze, M. Florovic, Andrej Vincze, Marek Tłaczała, D.S. Mc Phail, Daniel Donoval, Gert Irmer |
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| Rok vydání: | 2006 |
| Předmět: |
Phonon
Chemistry Doping Metals and Alloys Analytical chemistry Heterojunction Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake Condensed Matter::Superconductivity Materials Chemistry symbols Condensed Matter::Strongly Correlated Electrons Thin film Raman spectroscopy Spectroscopy Quantum well Molecular beam epitaxy |
| Zdroj: | Thin Solid Films. 497:7-15 |
| ISSN: | 0040-6090 |
| Popis: | We present a new method of determining the depth profile of the doping concentration in Si δ-doped GaAs layers and GaAs-based heterostructures by micro-Raman spectroscopy. In-depth resolution is obtained by scanning the laser spot along a shallow bevel synthesized in the structure of interest. The doping level is determined by assessing changes in the ratio of the transversal to the longitudinal optical phonon lines intensities. The determined doping concentration values are in good agreement with those determined by secondary ion mass spectroscopy and capacitance–voltage methods. |
| Databáze: | OpenAIRE |
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