Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN
| Autor: | Angelo Mascarenhas, Rajeev Kini, Yong Zhang, Ryan France, Aaron Ptak |
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| Rok vydání: | 2009 |
| Předmět: |
Photoluminescence
Condensed matter physics Condensed Matter::Other Chemistry Bowing Band gap Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Impurity Bound state Electronic band structure |
| Zdroj: | physica status solidi (b). 246:504-507 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/pssb.200880547 |
| Popis: | Dilute III-V alloys containing N or Bi share many features that are common, but some that are distinct. In GaP and GaAs, both the substituent species N and Bi behave as isoelectronic impurity traps and both lead to a giant bandgap bowing phenomenon. The isolated N and Bi impurities generate bound states in GaP but resonant states in GaAs. N impurity pairs have been observed as bound states in GaP and in GaAs whereas Bi impurity pairs have not been observed a bound states in GaP nor in GaAs. Low temperature photoluminescence studies on GaAs 1-x Bi x show undulations in the spectra but these are not associated with Bi-Bi pairs. Theoretical arguments for the differing behaviour of the N and Bi isolated impurities in GaAs as a function of pressure are provided. |
| Databáze: | OpenAIRE |
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